| PART |
Description |
Maker |
| M67749UH |
RF POWER MODULE 470-490MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| M68703SHA |
RF POWER MODULE 470-490MHz, 12.5V, 50W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57704UH 57704UH |
470-490MHz 12.5V /13W /FM MOBILE RADIO
470-490MHz 12.5V,13W,FM MOBILE RADIO
470-490MHZ, 12.5V, 13W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PTB20206 |
1.0 Watt, 470-860 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| EPS13D2C1HE-29.490M |
OSCILLATORS 100PPM -20 70 3.3V 4 29.490MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 29.49 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| TPV8100BD |
TPV8100B 470-860 MHz, 150 W, 28 V RF Power Transistor - Archived
|
Motorola
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| PTB20190 |
175 Watts, 470-806 MHz Digital Television Power Transistor
|
ERICSSON[Ericsson]
|
| PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M |
100ns; 5V power supply; 8M x 32 flash module
120ns; 5V power supply; 8M x 32 flash module
150ns; 5V power supply; 8M x 32 flash module
8M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68
8Mx32 5V Flash Module(8Mx32 5V闪速存储器模块)
Flash MCP
|
Glenair, Inc.
White Electronic Designs Corporation
|
